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Výzkum postupu pro přípravu aktivních a pasivních vlnovodů v polovodičích
 Prajzler, V. ; Špirková, J. ; Oswald, J. ; Peřina, Vratislav ; Hüttel, I. ; Hamáček, J. ; Machovič, V. ; Burian, Z.
The magnetron sputtering was used to fabricate RE doped GaN layers fabricated by magnetron sputtering on various substrate using a gaseous mixture of nitrogen and argon as precursors. The doping of the GaN films with RE occurred simultaneously with the sputtering process when placing the metal RE pellets or RE powder onto the Ga2O3 target. The amount of the incorporated erbium increased with increasing weight of the RE pellets or RE powder. We observed photoluminescence emission at 1 550 nm due to the 4I13/2 → 4I15/2 transition under excitation at 488 nm and 980 nm.
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